Discrete Semiconductor Products

IXFX120N65X2

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 650 V, 120 A, 0.024 OHM, PLUS247, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

IXFX120N65X2

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 650 V, 120 A, 0.024 OHM, PLUS247, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX120N65X2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds	15500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFX120N65X2 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFX120N30T	Through Hole	300 V	PLUS247™-3	960 W	MOSFET (Metal Oxide)	5 V	120 A	20 V	265 nC	TO-247-3 Variant	-55 °C	150 °C	10 V	20000 pF	24 mOhm	N-Channel
Littelfuse/Commercial Vehicle Products IXFX120N65X2	Through Hole	650 V	PLUS247™-3	1250 W	MOSFET (Metal Oxide)	5.5 V	120 A	30 V		TO-247-3 Variant	-55 °C	150 °C	10 V	15500 pF	24 mOhm	N-Channel	225 nC
Littelfuse/Commercial Vehicle Products IXFX120N25P	Through Hole	250 V	PLUS247™-3		MOSFET (Metal Oxide)	5 V	120 A	20 V		TO-247-3 Variant	-55 °C	175 ░C	10 V		24 mOhm	N-Channel	185 nC	700 W	8000 pF
Littelfuse/Commercial Vehicle Products IXFX120N30P3	Through Hole	300 V	PLUS247™-3	1130 W	MOSFET (Metal Oxide)	5 V	120 A	20 V	150 nC	TO-247-3 Variant	-55 °C	150 °C	10 V	8630 pF	27 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 23.92
		30	$ 19.83
		120	$ 18.59
		510	$ 15.86

Description

General part information

IXFX120N65X2 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet