Specification	KSC1009YTA

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

KSC1009 Series

Part	Supplier Device Package	Transistor Type	Power - Max [Max]	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KSC1009YTA	TO-92-3	NPN	800 mW	TO-226-3 TO-92-3	150 °C	100 nA	Through Hole	700 mV	50 MHz	140 V	120	700 mA
ON Semiconductor KSC1009GTA	TO-92-3	NPN	800 mW	TO-226-3 TO-92-3	150 °C	100 nA	Through Hole	700 mV	50 MHz	140 V	200	700 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 140 V 700 mA 50MHz 800 mW Through Hole TO-92-3

Technical documentation and resources