Discrete Semiconductor Products
R8011KNZ4C13
ActiveRohm Semiconductor
NCH 800V 11A, TO-247AD, HIGH-SPEED SWITCHING POWER MOSFET
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Discrete Semiconductor Products
R8011KNZ4C13
ActiveRohm Semiconductor
NCH 800V 11A, TO-247AD, HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R8011KNZ4C13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 139 W |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | TO-247G |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 600 | $ 8.06 | |
Description
General part information
R8011KNZ4 Series
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Documents
Technical documentation and resources