Discrete Semiconductor Products

MSJU11N65A-TP

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N-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MSJU11N65A-TP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Mounting Type
Micro Commercial Components MSJU11N65A-TP	30 V	11 A	83.3 W	4 V	650 V	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	10 V	380 mOhm	21 nC	MOSFET (Metal Oxide)	N-Channel	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 11A 83.3W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available