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TO-252-3
Discrete Semiconductor Products

IXTY01N100D

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-252D

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TO-252-3
Discrete Semiconductor Products

IXTY01N100D

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-252D

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTY01N100D
Current - Continuous Drain (Id) @ 25°C400 mA
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)0 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.8 nC
Input Capacitance (Ciss) (Max) @ Vds100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)1.1 W, 25 W
Rds On (Max) @ Id, Vgs80 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.83
70$ 3.03
140$ 2.60
560$ 2.31
1050$ 1.98
2030$ 1.86
5040$ 1.79

Description

General part information

IXTY01N100D Series

Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads.

Documents

Technical documentation and resources