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Discrete Semiconductor Products

IXTH34N65X2

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXTH34N65X2

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH34N65X2

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	540 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

IXTH34N65X2 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Mounting Type
Littelfuse/Commercial Vehicle Products IXTH34N65X2	34 A	105 mOhm	10 V	MOSFET (Metal Oxide)	TO-247-3	53 nC	TO-247 (IXTH)	650 V	3120 pF	4.5 V	30 V	-55 °C	150 °C	540 W	N-Channel	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.03
		30	$ 4.02
		120	$ 3.72
Newark	Each	250	$ 4.20
		250	$ 4.20
		500	$ 3.90
		500	$ 3.90

Description

General part information

IXTH34N65X2 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources