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PSMN2R6-80YSFX
Discrete Semiconductor Products

PSMN2R6-80YSFX

Active
Nexperia USA Inc.

NEXTPOWER 80 V, 2.4 MOHM, 231 A, N-CHANNEL MOSFET IN LFPAK56E PACKAGE

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PSMN2R6-80YSFX
Discrete Semiconductor Products

PSMN2R6-80YSFX

Active
Nexperia USA Inc.

NEXTPOWER 80 V, 2.4 MOHM, 231 A, N-CHANNEL MOSFET IN LFPAK56E PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R6-80YSFX
Current - Continuous Drain (Id) @ 25°C231 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs127 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8191 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max) [Max]294 W
Rds On (Max) @ Id, Vgs2.4 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.01
10$ 1.81
25$ 1.70
100$ 1.45
250$ 1.36
500$ 1.19
Digi-Reel® 1$ 2.01
10$ 1.81
25$ 1.70
100$ 1.45
250$ 1.36
500$ 1.19
N/A 920$ 3.53
Tape & Reel (TR) 1500$ 0.99
3000$ 0.92
7500$ 0.89
10500$ 0.85

Description

General part information

PSMN2R6-80YSF Series

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.