Discrete Semiconductor Products

RJK03M2DPA-00#J5A

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NCH POWER MOSFET 30V 45A 2.8MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 45A 2.8MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M2DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21.2 nC
Input Capacitance (Ciss) (Max) @ Vds	3850 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 45A 2.8mohm Power SON-8 5x6

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK03M2DPA-00#J5A	3850 pF	150 °C	4.5 V 10 V	8-WPAK	30 V	MOSFET (Metal Oxide)	20 V	40 W	Surface Mount	45 A	21.2 nC	N-Channel	8-WFDFN Exposed Pad	2.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources