Discrete Semiconductor Products

RFNL10BGE6STL

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600V 10A, TO-252, SINGLE SUPER FAST RECOVERY DIODE

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Search across all available documentation for this part.

DocumentsBasics of Thermal Resistance and Heat Dissipation Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+36

Discrete Semiconductor Products

RFNL10BGE6STL

Active

Rohm Semiconductor

600V 10A, TO-252, SINGLE SUPER FAST RECOVERY DIODE

Deep-Dive with AI

DocumentsBasics of Thermal Resistance and Heat Dissipation Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+36

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RFNL10BGE6STL

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	150 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-252GE
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

RFNL10BGE6S Series

600V 10A, TO-252, Single Super Fast Recovery Diode

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction	Supplier Device Package	Technology	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Speed
Rohm Semiconductor RFNL10BGE6STL	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 ¯C	TO-252GE	Standard	Surface Mount	10 A	150 ns	1.3 V	10 µA	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.43
Mouser	N/A	1	$ 2.34
		10	$ 1.55
		100	$ 1.07
		500	$ 0.85
		1000	$ 0.78
		2500	$ 0.70
		5000	$ 0.69

Description

General part information

RFNL10BGE6S Series

RFNL10BGE6S is the silicon epitaxial planar type Fast Recovery Diode with ultra low forward voltage and low switching loss, suitable for general rectification or PFC (DCM : Discontinuous Current Mode).