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Discrete Semiconductor Products

IXFX34N80

NRND

Littelfuse/Commercial Vehicle Products

DISC MSFT N-CH HIPERFETS-STD TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFX34N80

NRND

Littelfuse/Commercial Vehicle Products

DISC MSFT N-CH HIPERFETS-STD TO-247AD/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX34N80

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFX34N80 Series

Disc MSFT N-CH HiPerFETs-Std TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Technology	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Littelfuse/Commercial Vehicle Products IXFX34N80	34 A	Through Hole	560 W	MOSFET (Metal Oxide)	N-Channel	240 mOhm	800 V	5 V	PLUS247™-3	-55 °C	150 °C	20 V	TO-247-3 Variant	270 nC	7500 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 19.45
Newark	Each	250	$ 18.03

Description

General part information

IXFX34N80 Series

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources