Discrete Semiconductor Products
R6007KND3TL1
ActiveRohm Semiconductor
NCH 600V 7A, TO-252 (DPAK), HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
R6007KND3TL1
ActiveRohm Semiconductor
NCH 600V 7A, TO-252 (DPAK), HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6007KND3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 470 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) @ Id, Vgs | 620 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6007KND3 Series
R6007KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources