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Discrete Semiconductor Products

PBSS4360PASX

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Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 3A 2500MW 3-PIN DFN-D EP T/R

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3-HUSON
Discrete Semiconductor Products

PBSS4360PASX

Active
Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 3A 2500MW 3-PIN DFN-D EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4360PASX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 hFE
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case3-UDFN Exposed Pad
Power - Max [Max]600 mW
QualificationAEC-Q101
Supplier Device PackageDFN2020D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic325 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.38
100$ 0.27
500$ 0.21
1000$ 0.17
Digi-Reel® 1$ 0.45
10$ 0.38
100$ 0.27
500$ 0.21
1000$ 0.17
Tape & Reel (TR) 3000$ 0.15
6000$ 0.14
9000$ 0.13
30000$ 0.13

Description

General part information

PBSS4360PAS Series

NPN low VCEsattransistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.