Discrete Semiconductor Products

VS-HFA60FA120P

Obsolete

DIODE MODULE GP 1200V 30A SOT227

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Discrete Semiconductor Products

Obsolete

DIODE MODULE GP 1200V 30A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-HFA60FA120P

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	75 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	123 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-HFA60FA120P	200 mA 500 ns	3 V	SOT-227	1.2 kV	2 Independent	Standard	SOT-227-4 miniBLOC	30 A	150 °C	-55 °C	Chassis Mount	123 ns	75 µA
Vishay General Semiconductor - Diodes Division VS-HFA60EA120P	200 mA 500 ns	3 V	SOT-227	1.2 kV	1 Pair Series Connection	Standard	SOT-227-4 miniBLOC	30 A	150 °C	-55 °C	Chassis Mount	145 ns	75 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 30A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources