Discrete Semiconductor Products

MIW40N120F-BP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MIW40N120F-BP

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	240 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	277 W
Reverse Recovery Time (trr)	367 ns
Supplier Device Package	TO-247-3
Switching Energy	5.02 mJ, 2.72 mJ
Td (on/off) @ 25°C	160 ns, 237 ns
Test Condition	40 A, 15 V, 600 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Package / Case	Test Condition	Mounting Type	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	Td (on/off) @ 25°C	Switching Energy
Micro Commercial Components MIW40N120-BP	-55 °C	150 °C	277 W	1200 V	Trench Field Stop	TO-247-3	10 Ohm 15 V 40 A 600 V	Through Hole	TO-247-3	2.4 V	80 A	80 ns	239 nC
Micro Commercial Components MIW40N120F-BP	-55 °C	150 °C	277 W	1200 V	Trench Field Stop	TO-247-3	10 Ohm 15 V 40 A 600 V	Through Hole	TO-247-3	2.2 V	80 A	367 ns	240 nC	160 ns 237 ns	2.72 mJ 5.02 mJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1800	$ 6.53

General part information

IGBT Trench Field Stop 1200 V 80 A 277 W Through Hole TO-247-3

Technical documentation and resources