Specification	HUFA75639S3ST-F085A

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75639S_F085A Series

N-Channel UltraFET® Power MOSFET 100V, 56A, 25mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Technology	Power Dissipation (Max)
ON Semiconductor HUFA75639S3ST-F085A	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	56 A	20 V	4 V	25 mOhm	100 V	130 nC	N-Channel	Surface Mount	MOSFET (Metal Oxide)	200 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	270	$ 1.11

Description

General part information

HUF75639S_F085A Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.