Discrete Semiconductor Products

SI1035X-T1-GE3

LTB

MOSFET N/P-CH 20V SC89

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N/P-CH 20V SC89

Technical Specifications

Parameters and characteristics for this part

Specification	SI1035X-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	180 mA, 145 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.75 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	400 mV

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division SI1035X-T1-GE3	0.75 nC	MOSFET (Metal Oxide)	145 mA 180 mA	20 V	Logic Level Gate	250 mW	5 Ohm	400 mV	N and P-Channel	SC-89 (SOT-563F)	-55 °C	150 °C	SOT-563 SOT-666	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 180mA, 145mA 250mW Surface Mount SC-89 (SOT-563F)

Technical documentation and resources