Discrete Semiconductor Products

BUK661R8-30C,118

Obsolete

MOSFET N-CH 30V 120A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK661R8-30C,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	168 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10918 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	263 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Rds On (Max) @ Id, Vgs	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Grade	Vgs (Max)	Mounting Type
Freescale Semiconductor - NXP BUK661R8-30C,118	1.9 mOhm	AEC-Q101	-55 °C	175 ░C	263 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10918 pF	2.8 V	4.5 V 10 V	168 nC	N-Channel	D2PAK	120 A	30 V	MOSFET (Metal Oxide)	Automotive	16 V	Surface Mount
Freescale Semiconductor - NXP BUK661R9-40C,118	1.9 mOhm	AEC-Q101	-55 °C	175 ░C	306 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15100 pF	2.8 V	10 V	260 nC	N-Channel	D2PAK	120 A	40 V	MOSFET (Metal Oxide)	Automotive	16 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 120A (Tc) 263W (Tc) Surface Mount D2PAK

Technical documentation and resources