Specification	NTB90N02T4G

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTB90N02 Series

Power MOSFET 24V 90A 5.8 mOhm Single N-Channel D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package
ON Semiconductor NTB90N02T4G	29 nC	85 W	4.5 V 10 V	5.8 mOhm	20 V	N-Channel	2120 pF	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 V	24 V	MOSFET (Metal Oxide)	90 A	Surface Mount	D2PAK
ON Semiconductor NTB90N02G	29 nC	85 W	4.5 V 10 V	5.8 mOhm	20 V	N-Channel	2120 pF	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 V	24 V	MOSFET (Metal Oxide)	90 A	Surface Mount	D2PAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.