Discrete Semiconductor Products

CDBDSC5650-G

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DIODE SIL CARB 650V 21.5A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 21.5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CDBDSC5650-G

Capacitance @ Vr, F	424 pF
Current - Average Rectified (Io)	21.5 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Technology	Capacitance @ Vr, F	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr
Comchip Technology CDBDSC5650-G	0 ns	650 V	1.7 V	Surface Mount	No Recovery Time	SiC (Silicon Carbide) Schottky	424 pF	21.5 A	DPAK	175 ░C	-55 C	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 21.5A Surface Mount DPAK

Technical documentation and resources

No documents available