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TO-236-3, SC-59, SOT-23-3
Discrete Semiconductor Products

SL03P10-TP

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TO-236-3, SC-59, SOT-23-3
Discrete Semiconductor Products

SL03P10-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSL03P10-TP
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)830 mW
Rds On (Max) @ Id, Vgs [Max]286 mOhm
Supplier Device PackageSOT-23-3L
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3000$ 0.14

Description

General part information

SL03 Series

P-Channel 100 V 3A 830mW Surface Mount SOT-23-3L

Documents

Technical documentation and resources