Discrete Semiconductor Products

RJK03C0DPA-00#J53

Obsolete

MOSFET N-CH 30V 70A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 70A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03C0DPA-00#J53

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	11000 pF
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

N Channel Power MOSFET

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case
Renesas Electronics Corporation RJK03C0DPA-00#J53	65 W	66 nC	30 V	N-Channel	2 mOhm	MOSFET (Metal Oxide)	Surface Mount	2.5 V	8-WPAK	11000 pF	70 A	8-PowerWDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	463509	$ 2.10

General part information

The RJK03C0DPA is a N Channel Power MOSFET.

Technical documentation and resources