Specification	PEMB3,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	SOT-666
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PEMB3 Series

50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	Mounting Type	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Nexperia USA Inc. PEMB3,115	100 mV	SOT-563 SOT-666	1 µA	300 mW	SOT-666	2 PNP - Pre-Biased (Dual)	Surface Mount	4.7 kOhms	200	50 V	100 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources