Discrete Semiconductor Products

VS-8EVL06-M3/I

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DIODE GEN PURP 600V 8A SLIMDPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 8A SLIMDPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-8EVL06-M3/I

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	56 ns
Speed	200 mA, 500 ns
Supplier Device Package	SlimDPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.35 V

Part	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-8EVL06-M3/I	8 A	Standard	56 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1.35 V	SlimDPAK	600 V	5 µA	200 mA 500 ns	175 ░C	-55 C
Vishay General Semiconductor - Diodes Division VS-8EVL06HM3/I	8 A	Standard	56 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1.35 V	SlimDPAK	600 V	5 µA	200 mA 500 ns	175 ░C	-55 C	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount SlimDPAK

Technical documentation and resources