Discrete Semiconductor Products

SIA440DJ-T1-GE3

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MOSFET N-CH 40V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 40V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA440DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	Vgs (Max)	Technology	Package / Case	FET Type
Vishay General Semiconductor - Diodes Division SIA440DJ-T1-GE3	40 V	21.5 nC	12 A	Surface Mount	26 mOhm	700 pF	1.4 V	-55 °C	150 °C	3.5 W 19 W	10 V	2.5 V	PowerPAK® SC-70-6	12 V	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	N-Channel

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General part information

N-Channel 40 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources