Discrete Semiconductor Products

SQD50034E_GE3

LTB

MOSFET N-CH 60V 100A TO252AA

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 100A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SQD50034E_GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Grade
Vishay General Semiconductor - Diodes Division SQD50034E_GE3	3.5 V	Surface Mount	90 nC	107 W	MOSFET (Metal Oxide)	N-Channel	60 V	10 V	TO-252AA	20 V	AEC-Q101	100 A	6600 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	Automotive

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General part information

N-Channel 60 V 100A (Tc) 107W (Tc) Surface Mount TO-252AA

Technical documentation and resources