Discrete Semiconductor Products

PJA3472B_R1_00001

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60V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3472B_R1_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.82 nC
Input Capacitance (Ciss) (Max) @ Vds	34 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJA3472B_R1_00001	-55 °C	150 °C	3 Ohm	SOT-23	0.82 nC	SC-59 SOT-23-3 TO-236-3	300 mA	Surface Mount	2.5 V	500 mW	34 pF	N-Channel	60 V	30 V	MOSFET (Metal Oxide)	4.5 V 10 V

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General part information

N-Channel 60 V 300mA (Ta) 500mW (Ta) Surface Mount SOT-23

Technical documentation and resources