Discrete Semiconductor Products

NTR4171PT1G

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SINGLE P−CHANNEL POWER MOSFET -30V, -3.5A, 75MΩ

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Discrete Semiconductor Products

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SINGLE P−CHANNEL POWER MOSFET -30V, -3.5A, 75MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTR4171PT1G

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	155 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	480 mW
Rds On (Max) @ Id, Vgs [Max]	75 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Single P−Channel Power MOSFET -30V, -3.5A, 75mΩ

Part	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor NTR4171PT1G	P-Channel	12 V	30 V	720 pF	10 V	2.5 V	Surface Mount	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	155 °C	2.2 A	480 mW	75 mOhm	SC-59 SOT-23-3 TO-236-3	1.4 V

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General part information

30 V, 3.5 A, 75 mOhm Single P-Channel Power MOSFET, SOT-23

Technical documentation and resources