Discrete Semiconductor Products

IRLL110TRPBF-BE3

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POWER MOSFET, N CHANNEL, 100 V, 1.5 A, 0.54 OHM, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 100 V, 1.5 A, 0.54 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRLL110TRPBF-BE3

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRLL110TRPBF-BE3	SOT-223	4 V 5 V	N-Channel	1.5 A	10 V	250 pF	Surface Mount	100 V	540 mOhm	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	2 V	-55 °C	150 °C	2 W 3.1 W
Vishay General Semiconductor - Diodes Division IRLL110TR	SOT-223	4 V 5 V	N-Channel	1.5 A	10 V	250 pF	Surface Mount	100 V	540 mOhm	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	2 V	-55 °C	150 °C	2 W 3.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Technical documentation and resources