Discrete Semiconductor Products
2SC5354-1(F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 800 V, 5 A, TO-3P(N)
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Discrete Semiconductor Products
2SC5354-1(F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 800 V, 5 A, TO-3P(N)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC5354-1(F) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 100 W |
| Supplier Device Package | TO-3P(N) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.85 | |
| Tray | 50 | $ 2.87 | ||
Description
General part information
2SC5354 Series
Bipolar (BJT) Transistor NPN 800 V 5 A 100 W Through Hole TO-3P(N)
Documents
Technical documentation and resources