Discrete Semiconductor Products

SI3867DV-T1-E3

Obsolete

MOSFET P-CH 20V 3.9A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 3.9A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3867DV-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SI3867DV-T1-E3	3.9 A	6-TSOP	51 mOhm	MOSFET (Metal Oxide)	2.5 V 4.5 V	20 V	12 V	-55 °C	150 °C	P-Channel	11 nC	1.1 W	SOT-23-6 Thin TSOT-23-6	1.4 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Technical documentation and resources

No documents available