Specification	SSM6K404TU,LF

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM6K404TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 3.0 A, 0.055 Ω@4V, SOT-363F(UF6)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case
Toshiba Semiconductor and Storage SSM6K404TU,LF	1.5 V	4 V	UF6	Surface Mount	1 V	500 mW	3 A	10 V	400 pF	55 mOhm	N-Channel	150 °C	MOSFET (Metal Oxide)	20 V	5.9 nC	6-SMD Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 3.0 A, 0.055 Ω@4V, SOT-363F(UF6)

Technical documentation and resources