Discrete Semiconductor Products

RJK03M1DPA-00#J5A

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NCH POWER MOSFET 30V 50A 2.3MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 50A 2.3MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M1DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	4720 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	WPAK(3F) (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 50A 2.3mohm Power SON-8 5x6

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Renesas Electronics Corporation RJK03M1DPA-00#J5A	50 A	N-Channel	8-PowerVDFN	2.3 mOhm	30 V	25 nC	WPAK(3F) (5x6)	4.5 V 10 V	45 W	MOSFET (Metal Oxide)	150 °C	20 V	4720 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources