
Integrated Circuits (ICs)
IS61WV51216BLL-10MLI-TR
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 8M-BIT 512K X 16 10NS 48-PIN MINI-BGA T/R
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Integrated Circuits (ICs)
IS61WV51216BLL-10MLI-TR
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 8M-BIT 512K X 16 10NS 48-PIN MINI-BGA T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV51216BLL-10MLI-TR |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 512K x 16 |
| Memory Size | 1024 KB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-miniBGA (9x11) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.4 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 12.72 | |
| Tape & Reel (TR) | 2000 | $ 11.26 | ||
Description
General part information
IS61WV51216 Series
High-speed access times: 8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater noise immunity
Documents
Technical documentation and resources
No documents available