Discrete Semiconductor Products

IPL65R340CFDAUMA1

Obsolete

MOSFET N-CH 650V 10.9A THIN-PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 10.9A THIN-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R340CFDAUMA1

Current - Continuous Drain (Id) @ 25°C	10.9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	104.2 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
INFINEON IPL65R340CFDAUMA1	-40 °C	150 °C	PG-VSON-4	Surface Mount	4-PowerTSFN	41 nC	1100 pF	10 V	N-Channel	104.2 W	650 V	340 mOhm	MOSFET (Metal Oxide)	20 V	4.5 V	10.9 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 10.9A (Tc) 104.2W (Tc) Surface Mount PG-VSON-4

Technical documentation and resources

No documents available