Discrete Semiconductor Products

IDH04SG60CXKSA2

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SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 4 A, 4.5 NC, TO-220

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Discrete Semiconductor Products

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SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 4 A, 4.5 NC, TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	IDH04SG60CXKSA2

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Speed	Mounting Type	Supplier Device Package	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
INFINEON IDH04SG60CXKSA2	500 mA	Through Hole	PG-TO220-2-1	SiC (Silicon Carbide) Schottky	0 ns	80 pF	600 V	2.3 V	4 A	TO-220-2	175 ░C	-55 °C	25 µA

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General part information

Diode 600 V 4A Through Hole PG-TO220-2-1

Technical documentation and resources