Discrete Semiconductor Products

PSMN2R5-60PLQ

Obsolete

MOSFET N-CH 60V 150A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 150A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R5-60PLQ

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	223 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	349 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	FET Type
Freescale Semiconductor - NXP PSMN2R5-60PLQ	Through Hole	150 A	4.5 V 10 V	2.1 V	MOSFET (Metal Oxide)	2.6 mOhm	60 V	-55 °C	175 ░C	TO-220AB	223 nC	20 V	349 W	TO-220-3	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 150A (Tc) 349W (Tc) Through Hole TO-220AB

Technical documentation and resources