Specification	CCS15S30,L3F

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	2-SMD, No Lead
Speed	500 ns, 200 mA
Supplier Device Package	CST2C
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	400 mV

CCS15S30 Series

Diodes, 20 V/1.5 A Schottky Barrier Diode, SOD-963(CST2C)

Part	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Technology	Speed
Toshiba Semiconductor and Storage CCS15S30,L3F	CST2C	1.5 A	Surface Mount	125 °C	500 µA	20 V	400 mV	200 pF	2-SMD No Lead	Schottky	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	18539	$ 0.36

General part information

Diodes, 20 V/1.5 A Schottky Barrier Diode, SOD-963(CST2C)

Technical documentation and resources