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Technical Specifications
Parameters and characteristics for this part
| Specification | QS5U17TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 175 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Power Dissipation (Max) [Max] | 900 mW |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | TSMT5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QS5U17 Series
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Documents
Technical documentation and resources