Discrete Semiconductor Products
APTM120A80FT1G
ObsoleteMicrosemi Corporation
MOSFET 2N-CH 1200V 14A SP1
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Search across all available documentation for this part.
Discrete Semiconductor Products
APTM120A80FT1G
ObsoleteMicrosemi Corporation
MOSFET 2N-CH 1200V 14A SP1
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APTM120A80FT1G |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 260 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6696 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SP1 |
| Power - Max [Max] | 357 W |
| Rds On (Max) @ Id, Vgs | 960 mOhm |
| Supplier Device Package | SP1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 73.95 | |
Description
General part information
APTM120 Series
Mosfet Array 1200V (1.2kV) 14A 357W Chassis Mount SP1
Documents
Technical documentation and resources