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DocumentsSI5999EDU-T1-GE3 | Datasheet
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DocumentsSI5999EDU-T1-GE3 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI5999EDU-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 496 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Package Name | PowerPAK® ChipFet Dual |
| Power - Max | 10.4 W |
| Rds On (Max) | 59 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
SI5999 Series
Mosfet Array 20V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual
Documents
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