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DIRECTFET L8
Discrete Semiconductor Products

IRF7759L2TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 2.3 MOHM;

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DIRECTFET L8
Discrete Semiconductor Products

IRF7759L2TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 2.3 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF7759L2TRPBF
Current - Continuous Drain (Id) @ 25°C375 A, 26 A
Current - Continuous Drain (Id) @ 25░C375 A
Current - Continuous Drain (Id) @ 25░C26 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs300 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]12222 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C, 175 °C
Operating Temperature [Min]-55 ░C, -55 °C
Package / CaseDirectFET™ Isometric L8
Power Dissipation (Max)125 W, 3.3 W
Rds On (Max) @ Id, Vgs2.3 mOhm
Supplier Device PackageDirectFET™ Isometric L8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)▒20V
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V, 4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRF7759 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.