Discrete Semiconductor Products

SBCT30100

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	SBCT30100

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	TO-220-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	750 mV

Part	Qualification	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Mounting Type	Diode Configuration	Technology	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage @ Vr	Grade	Voltage - Forward (Vf) (Max) @ If [Max]
Diotec Semiconductor SBCT30200-AQ	AEC-Q101	850 mV	150 °C	-50 °C	200 V	200 mA 500 ns	TO-220AB	Through Hole	1 Pair Common Cathode	Schottky	20 A	TO-220-3	10 ÁA	Automotive
Diotec Semiconductor SBCT30100			150 °C	-50 °C	100 V	200 mA 500 ns	TO-220AB	Through Hole	1 Pair Common Cathode	Schottky	15 A	TO-220-3	10 µA		750 mV
Diotec Semiconductor SBCT30150		850 mV	150 °C	-50 °C		200 mA 500 ns	TO-220AB	Through Hole	1 Pair Common Cathode	Schottky	15 A	TO-220-3	10 µA
Diotec Semiconductor SBCT30200		850 mV	150 °C	-50 °C	200 V	200 mA 500 ns	TO-220AB	Through Hole	1 Pair Common Cathode	Schottky	20 A	TO-220-3	10 ÁA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 100 V 15A Through Hole TO-220-3

Technical documentation and resources