Discrete Semiconductor Products

IRFR4104TRLPBF

LTB

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 5.5 MOHM;

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Discrete Semiconductor Products

LTB

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 5.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR4104TRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	89 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Supplier Device Package	Technology
INFINEON IRFR4104TRRPBF	4 V	40 V	89 nC	175 °C	-55 °C	10 V	42 A	20 V	5.5 mOhm	2950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	140 W	Surface Mount	N-Channel	TO-252AA (DPAK)	MOSFET (Metal Oxide)
INFINEON IRFR4104TRLPBF	4 V	40 V	89 nC	175 °C	-55 °C	10 V	42 A	20 V	5.5 mOhm	2950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	140 W	Surface Mount	N-Channel	TO-252AA (DPAK)	MOSFET (Metal Oxide)

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