Discrete Semiconductor Products

SIHA22N60AE-E3

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MOSFET N-CHANNEL 600V 20A TO220

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Discrete Semiconductor Products

Active

MOSFET N-CHANNEL 600V 20A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA22N60AE-E3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	1451 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHA22N60AE-E3	30 V	20 A	N-Channel	Through Hole	4 V	TO-220 Full Pack	96 nC	1451 pF	TO-220-3 Full Pack	MOSFET (Metal Oxide)	33 W	180 mOhm	-55 °C	150 °C	600 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.80

General part information

N-Channel 600 V 20A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources