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Discrete Semiconductor Products

IXTQ130N10T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE

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Discrete Semiconductor Products

IXTQ130N10T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ130N10T

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5080 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTQ130N10T Series

DiscMSFT NChTrenchGate-Gen1 TO-3P (3)

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXTQ130N10T	SC-65-3 TO-3P-3	10 V	Through Hole	130 A	100 V	5080 pF	9.1 mOhm	MOSFET (Metal Oxide)	TO-3P	-55 °C	175 ░C	360 W	N-Channel	4.5 V	20 V	104 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 4.26
		90	$ 3.65
		300	$ 3.45
		750	$ 3.25
		1500	$ 2.78
		3000	$ 2.62
Newark	Each	100	$ 3.58
		500	$ 3.26
		1000	$ 2.88
		2500	$ 2.68

Description

General part information

IXTQ130N10T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density