M10082040054X0PWAR

Obsolete

Renesas Electronics Corporation

IC RAM 8MBIT 54MHZ 8DFN

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Integrated Circuits (ICs)

M10082040054X0PWAR

Obsolete

Renesas Electronics Corporation

IC RAM 8MBIT 54MHZ 8DFN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	M10082040054X0PWAR

Clock Frequency	54 MHz
Memory Format	RAM
Memory Organization	2M x 4
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 ░C
Operating Temperature [Min]	-40 °C
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-DFN (5x6)
Technology	MRAM (Magnetoresistive RAM)
Voltage - Supply [Max]	2 V
Voltage - Supply [Min]	1.71 V

M10082040108 Series

Non-Volatile 8Mb High Performance MRAM, 1.8V

Part	Memory Organization	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Type	Clock Frequency	Mounting Type	Memory Size	Memory Format	Package / Case	Supplier Device Package	Package / Case [y]	Package / Case [x]	Memory Interface
Renesas Electronics Corporation M10082040108X0IWAY	2M x 4	85 °C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	108 MHz	Surface Mount	1024 KB	RAM	8-WDFN Exposed Pad	8-DFN (5x6)
Renesas Electronics Corporation M10082040054X0PWAR	2M x 4	105 ░C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	54 MHz	Surface Mount	1024 KB	RAM	8-WDFN Exposed Pad	8-DFN (5x6)
Renesas Electronics Corporation M10082040108X0PSAY	2M x 4	105 ░C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	108 MHz	Surface Mount	1024 KB	RAM	8-SOIC	8-SOIC	5.3 mm	0.209 "
Renesas Electronics Corporation M10082040054X0PSAY	2M x 4	105 ░C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	54 MHz	Surface Mount	1024 KB	RAM	8-SOIC	8-SOIC	5.3 mm	0.209 "
Renesas Electronics Corporation M10082040108X0IWAR	2M x 4	85 °C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	108 MHz	Surface Mount	1024 KB	RAM	8-VDFN Exposed Pad	8-DFN (5x6)			SPI
Renesas Electronics Corporation M10082040108X0ISAR	2M x 4	85 °C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	108 MHz	Surface Mount	1024 KB	RAM	8-SOIC	8-SOIC	5.3 mm	0.209 "
Renesas Electronics Corporation M10082040108X0PSAR	2M x 4	105 ░C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	108 MHz	Surface Mount	1024 KB	RAM	8-SOIC	8-SOIC	5.3 mm	0.209 "
Renesas Electronics Corporation M10082040054X0ISAR	2M x 4	85 °C	-40 °C	MRAM (Magnetoresistive RAM)	2 V	1.71 V	Non-Volatile	54 MHz	Surface Mount	1024 KB	RAM	8-SOIC	8-SOIC	5.3 mm	0.209 "

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

M10082040108 Series

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

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Technical documentation and resources