Specification	HUF75645S3ST

Current - Continuous Drain (Id) @ 25C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	238 nC
Input Capacitance (Ciss) (Max) @ Vds	3790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs(th) (Max) @ Id	4 V

HUF75645S3S Series

N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ

Part	Supplier Device Package	Technology	Package / Case	Current - Continuous Drain (Id) @ 25C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max) [Max]
ON Semiconductor HUF75645S3ST	TO-263 (D2PAK)	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	4 V	238 nC	310 W	14 mOhm	Surface Mount	10 V	100 V	175 ░C	-55 °C	3790 pF	N-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ

Technical documentation and resources