Discrete Semiconductor Products

IPD5N03LAG

Unknown

MOSFET N-CH 25V 50A TO252-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 25V 50A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD5N03LAG

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2653 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
INFINEON IPD5N03LAG	4.5 V 10 V	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	22 nC	20 V	2 V	2653 pF	MOSFET (Metal Oxide)	25 V	N-Channel	Surface Mount	175 °C	-55 °C	50 A	5.2 mOhm

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General part information

N-Channel 25 V 50A (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources