Discrete Semiconductor Products

GT2K0P20M

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MOSFET P-CH 150V 19A TO-263-3

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Discrete Semiconductor Products

Active

MOSFET P-CH 150V 19A TO-263-3

Technical Specifications

Parameters and characteristics for this part

Specification	GT2K0P20M

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	-200 V, 150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF, 1120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	138 W
Power Dissipation (Max) [Max]	138 W
Rds On (Max) @ Id, Vgs	11 mOhm, 200 mOhm
Supplier Device Package	D2PAK, TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

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General part information

MOSFET P-CH 150V 19A TO-263-3

Technical documentation and resources