Discrete Semiconductor Products

SI8401DB-T1-E1

LTB

MOSFET P-CH 20V 3.6A 4MICROFOOT

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 3.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8401DB-T1-E1

Current - Continuous Drain (Id) (Ta)	3.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	17 nC, 17 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	1.47 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Mounting Type	Package Name	Rds On (Max)
Vishay Dale SI8401DB-T1-E1	4-XFBGA CSPBGA	20 V	1.4 V	MOSFET (Metal Oxide)	17 nC 17 nC	1.47 W	-55 °C	150 °C	P-Channel	2.5 V	4.5 V	3.6 A	12 V	Surface Mount	4-Microfoot	65 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 20 V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources